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G2U9972 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Key Features

  • Simple Drive Requirement.
  • Lower Gate Charge Package Dimensions REF. A b c D E Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 REF. c2 b2 L e L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 IAR Tj, Tstg Ratings 60 2.

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Datasheet Details

Part number G2U9972
Manufacturer GTM
File Size 325.50 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet G2U9972 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/07/05 REVISED DATE : G2U9972 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 18m 60A The G2U9972 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-262 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters. Description Features *Simple Drive Requirement *Lower Gate Charge Package Dimensions REF. A b c D E Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 REF. c2 b2 L e L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 1.27 REF.