G3407 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

Part number	G3407
Manufacturer	GTM
File Size	329.42 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	G3407 Datasheet
Additional preview pages of the G3407 datasheet.

The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change.

The device is suitable for use as a load switch or in PWM applications.

Lower Gate Charge Small Package Outline RoHS Compliant

Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=.

📁 Similar Datasheet

G3401 - Dual Bidirectional I2C Bus and SMBus VoltageLevel Translator (Global Mixed-mode Technology)
G3402 - 4-Bit Bidirectional Voltage Level Translator (Global Mixed-mode Technology)
G3403 - Bidirectional I2C Bus and SMBus Voltage Level Translator (Global Mixed-mode Technology)

Other Datasheets by GTM

Published: Sep 19, 2007 |