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G3401 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The G3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device.

The G3401 is universally used for all commercial-industrial applications.

Lower Gate Charge Small Package Outline RoHS Compliant

Key Features

  • Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=2.

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Datasheet Details

Part number G3401
Manufacturer GTM
File Size 333.91 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet G3401 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Pb Free Plating Product CORPORATION G3401 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2006/08/31 REVISED DATE : BVDSS RDS(ON) ID -30V 50m -4.2A Description The G3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The G3401 is universally used for all commercial-industrial applications. *Lower Gate Charge *Small Package Outline *RoHS Compliant Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.