Datasheet Summary
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Pb Free Plating Product
CORPORATION
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2007/01/15 REVISED DATE :
BVDSS RDS(ON) ID
-30V 52m -4.1A
Description
The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications.
- Lower Gate Charge
- Small Package Outline
- RoHS pliant
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0°...