Datasheet4U Logo Datasheet4U.com

G3407 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change.

The device is suitable for use as a load switch or in PWM applications.

Lower Gate Charge Small Package Outline RoHS Compliant

Key Features

  • Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=.

📥 Download Datasheet

Datasheet Details

Part number G3407
Manufacturer GTM
File Size 329.42 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet G3407 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
G3401 Dual Bidirectional I2C Bus and SMBus VoltageLevel Translator Global Mixed-mode Technology
G3402 4-Bit Bidirectional Voltage Level Translator Global Mixed-mode Technology
G3403 Bidirectional I2C Bus and SMBus Voltage Level Translator Global Mixed-mode Technology

Other Datasheets by GTM

Part Number Description
G3400 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
G3401 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
G3403 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
G3403A P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Pb Free Plating Product CORPORATION G3407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2007/01/15 REVISED DATE : BVDSS RDS(ON) ID -30V 52m -4.1A Description The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. *Lower Gate Charge *Small Package Outline *RoHS Compliant Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.