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G3400 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Lower Gate Charge Small Package Outline RoHS Compliant

Key Features

  • Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM.

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Datasheet Details

Part number G3400
Manufacturer GTM
File Size 303.89 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet G3400 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/08/14 REVISED DATE : G3400 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 28m 5.8A The G3400 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The G3400 is universally used for all commercial-industrial applications. Description * Lower Gate Charge *Small Package Outline *RoHS Compliant Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.