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CORPORATION
G DB AS16
Description
V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A
ISSUED DATE :2006/12/12 REVISED DATE :
S U R F A C E M O U N T, S W I T C H I N G D I O D E
The GDBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package.
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70
REF. L b c Q1
Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18
0.15 BSC.
GDBAS16 Datasheet
