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GE15P10 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

low voltage applications such as high efficiency switching DC/DC converters and DC motor control.

Key Features

  • Simple Drive Requirement.
  • Lower On-resistance.
  • Fast Switching Characteristic.
  • RoHS Compliant Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous D.

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Datasheet Details

Part number GE15P10
Manufacturer GTM
File Size 241.86 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GE15P10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : GE15P10 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -100V 210m -16A Description The GE15P10 (TO-220 package through-hole version) is available for low-profile applications and suited for low voltage applications such as high efficiency switching DC/DC converters and DC motor control. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *RoHS Compliant Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.