NPN EPITAXIAL SILICON TRANSISTOR The GI4672 is designed for low frequency amplifier applications. Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA Exce.

Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA Excellent DC current gain characteristics Package Di.

Features NPN EPITAXIAL SILICON TRANSISTOR The GI4672 is designed for low frequency amplifier applications. Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA Excellent DC current gain characteristics Package Dimensions TO-251 REF..

GI405

GI40N03

GI40T03

GI41C

GI42C

GI494

GI01-04

GI01-05

GI01-06

GI01-64

GI01-64D

GI01-65

GI01-66