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GI405 Datasheet PDF

GTM GI405

The GI405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate resistance. The through-hole version (TO-251) is available for low-profile applications and suited for high current load applications.
Part No. GI405
Datasheet GI405 Download
Manufacturer
GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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GI405 datasheet page 1 preview

DESCRIPTION

*Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic

FEATURES

Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80

ABSOLUTE MAXIMUM RATINGS

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings -30 ±20 -18 -14 -40 60 0.4 61 -35 -55 ~ +175 Unit V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy EAS IAS Tj, Tstg Single Pulse Avalanche Current Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.5 50 Unit /W /W GI405 Page: 1/4 ISSUED DATE :2006/12/06 REVISED DATE : Electr...
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