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GI405 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The GI405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate resistance.

The through-hole version (TO-251) is available for low-profile applications and suited for high current load applications.

Simple Drive Requirement Lower On-resistance

Key Features

  • Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings -30 ±20 -18 -14 -40 60 0.4 61 -35 -55 ~ +17.

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Datasheet Details

Part number GI405
Manufacturer GTM
File Size 280.01 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GI405 Datasheet

Full PDF Text Transcription for GI405 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GI405. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/12/06 REVISED DATE : GI405 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 32m -18A Descriptio...

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NHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 32m -18A Description The GI405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate resistance. The through-hole version (TO-251) is available for low-profile applications and suited for high current load applications. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.

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