GI405 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

Part number	GI405
Manufacturer	GTM
File Size	280.01 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GI405 Datasheet
Additional preview pages of the GI405 datasheet.

The GI405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate resistance.

The through-hole version (TO-251) is available for low-profile applications and suited for high current load applications.

Simple Drive Requirement Lower On-resistance

Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings -30 ±20 -18 -14 -40 60 0.4 61 -35 -55 ~ +17.

Other Datasheets by GTM

Published: Sep 4, 2007 |