GI40T03
GI40T03 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description
The GI40T03 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
Features
- Low Gate Charge
- Simple Drive Requirement
- Fast Switching Characteristic
- Ro HS pliant
Package Dimensions
TO-251
REF.
A B C D E F
Millimeter
Min.
Max.
2.30 REF.
REF.
G H J K L M
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor
VGS ID @TC=25к ID @TC=100к
IDM PD @TC=25к
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings 30 ±25 28 24 95
31.25 0.25 -55 ~ +150
Unit V V A A A...
