GI80N03 mosfet equivalent, n-channel enhancement mode power mosfet.
*Low On-resistance *Simple Drive Requirement *Fast Switching Characteristic
Package Dimensions TO-251
REF. A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.
and suited for low voltage applications such as DC/DC converters.
Features
*Low On-resistance *Simple Drive Requiremen.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 8m 80A
The GI80N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251.
Image gallery
Download