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GI80LS02 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance.

Features

  • Low On-resistance.
  • Simple Drive Requirement.
  • Fast Switching Speed Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25.

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Datasheet preview – GI80LS02

Datasheet Details

Part number GI80LS02
Manufacturer GTM
File Size 271.53 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GI80LS02 Datasheet
Additional preview pages of the GI80LS02 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/02/15 REVISED DATE : GI80LS02 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 8m 75A The GI80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Features *Low On-resistance *Simple Drive Requirement *Fast Switching Speed Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.
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