Datasheet4U Logo Datasheet4U.com

GI85T03 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The GI85T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 30 ±20 75 55 350 107 0.7 -55 ~ +17.

📥 Download Datasheet

Datasheet Details

Part number GI85T03
Manufacturer GTM
File Size 266.45 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GI85T03 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GI850 3 Amp Fast Switching Plastic Rectifier NTE
GI850 (GI850 - GI858) Fast Switching Plastic Rectifier Vishay Siliconix
GI851 3 Amp Fast Switching Plastic Rectifier NTE
GI851 (GI850 - GI858) Fast Switching Plastic Rectifier Vishay Siliconix
GI852 3 Amp Fast Switching Plastic Rectifier NTE

Other Datasheets by GTM

Part Number Description
GI85L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GI8050 NPN EPITAXIAL TRANSISTOR
GI80LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GI80N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GI882 NPN EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/11/24 REVISED DATE : GI85T 03 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 6m 75A The GI85T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. *Low Gate Charge *Simple Drive Requirement *Fast Switching Speed *RoHS Compliant Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.