GI80N03 Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 8m 80A The GI80N03 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
GI80N03 Key Features
- Low On-resistance -Simple Drive Requirement -Fast Switching Characteristic