| Part number | GI88LS02 |
|---|---|
| Datasheet | GI88LS02_GTM.pdf |
| File Size | 265.34 KB |
| Manufacturer | GTM |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 5m 75A The GI88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Low Gate Charge Simple Drive Requirement Fast Switching.
| Part Number | Description |
|---|---|
| GI88L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI882 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GI8050 | NPN EPITAXIAL TRANSISTOR |
| GI80LS02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI80N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI85L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI85T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
