npn epitaxial silicon transistor.
NPN EPITAXIAL SILICON TRANSISTOR
The GJ4672 is designed for low frequency amplifier applications. Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA Exce.
Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA Excellent DC current gain characteristics
Package Di.
Features
NPN EPITAXIAL SILICON TRANSISTOR
The GJ4672 is designed for low frequency amplifier applications. Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA Excellent DC current gain characteristics
Package Dimensions
TO-252
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