GJ9435 Datasheet P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: GTM

Datasheet Details

Part number	GJ9435
Manufacturer	GTM
File Size	222.16 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GJ9435 Datasheet

The GJ9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The TO-252 package is universally used for commercial-industrial applications.

Pb Free Plating Product ISSUED DATE :2005/02/23 REVISED DATE : GJ9435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V.

Simple Drive Requirement.
Lower Gate Charge.
Fast Switching Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain.

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