GJ9585 Datasheet | GTM

Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings -80 ±25 -11.2 -7.1 -30 44.6 0.36 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.8 110 Unit /W /W Page: 1/4 ISSUED DATE :2005/12/05 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. -80 -1.0 Typ. -0.07 10 19 5 7 10 15 64 56 1740 140 90 Max. -3.0 ±100 -1 -25 180 200 30 2780 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=-250u A Reference to 25 , ID=-1m A VDS=VGS, ID=-250u A VDS=-10V, ID=-6A VGS= ±25V VDS=-80V, VGS=0 VDS=-64V, VGS=0 VGS=-10V, ID=-10A VGS=-4.5V, ID=-6A ID=-6A VDS=-64V VGS=-4.5V VDS=-40V ID=-6A VGS=-10V RG=3.3 RD=6.7 VGS=0V VDS=-25V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Source-Drain Diode Parameter Forward On Voltage 2 2 Symbol VSD Trr Qrr Min. - Typ. 86...