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GMBT3019
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation
Symbol Tj
Tstg VCBO VCEO VEBO
IC PD
Characteristics at Ta = 25к
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 hFE3 hFE4 hFE5 fT Cob
Min. 140 80
7 50 90 100 50 15 100 -
Typ. -
Max. 50 50
0.2 1.1
300 12
REF.
A B C D E F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G H K J L M
Millimeter
Min. Max.
1.
GMBT3019 Datasheet
