GSMBT5401 transistor equivalent, transistor.
P NP EP ITAXI AL P L ANAR T RANS ISTO R
The GSMBT5401 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Vo.
requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=-150V @ IC=-1mA) Complementary to GSMB.
Features
P NP EP ITAXI AL P L ANAR T RANS ISTO R
The GSMBT5401 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=-150V @ IC=-1mA) Complementary to GSMBT5551
Package Dimen.
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