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GT2602 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

Capable of 2.5V gate drive Low on-resistance

Features

  • Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA.

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Datasheet preview – GT2602

Datasheet Details

Part number GT2602
Manufacturer GTM
File Size 376.70 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GT2602 Datasheet
Additional preview pages of the GT2602 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/05/06 REVISED DATE : GT2602 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 34m 6.3A The GT2602 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GT2602 is universally used for all commercial-industrial applications. Description *Capable of 2.5V gate drive *Low on-resistance Features Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.
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