GT2622 Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: GTM

GT2622 n-channel enhancement mode power mosfet by GTM - Datasheet Preview

Datasheet Details

Part number	GT2622
Manufacturer	GTM
File Size	334.29 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Download	GT2622 Download (PDF)

General Description

*Low Gate Charge *Surface Mount package *RoHS Compliant

Overview

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/16 REVISED DATE : GT2622 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 50V 1.8 520mA The GT2622 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-26 package is universally used for all commercial-industrial applications.

Key Features

Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V 3 Continuous Drain Current , VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID.

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