GTM GT2623
The GT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GT2623 is universally used for all commercial-industrial applications.| Part No. | GT2623 |
|---|---|
| Datasheet | GT2623 Download |
| Manufacturer |  GTM |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
*Low Gate Charge *Low On-resistanceFEATURES
Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF.ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -30 20 -2 -1.6 -20 1.2 0.01 -55 ~ +150 Ratings 110 Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W 1/4 ISSUED DATE :2005/05/06 REVISED DATE :ELECTRICAL CHARACTERISTICS
(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. -30 -1.0 Typ. -0.02 2 2.8 0.5 1.4 5 6 15 3 150 42 32 Max. -3.0 100 -1...
