GTM GT2625
The GT2625 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GT2625 is universally used for all commercial-industrial applications.| Part No. | GT2625 |
|---|---|
| Datasheet | GT2625 Download |
| Manufacturer |  GTM |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
*Low Gate Charge *Low On-resistance Package DimensionsABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 0.30 0.55 0 0.10 0° 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. Ratings -30 f12 -2.3 -2.0 -20 1.2 0.01 -55 ~ +150 Ratings 110 Unit V V A A A W W/ć ć Unit ć/W 1/4 ISSUED DATE :2005/05/18 REVISED DATE :ELECTRICAL CHARACTERISTICS
(Tj = 25ć Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -30 - - Breakdown Voltage Temperature Coefficient ϦBVDSS...
