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GTS217E Datasheet Preview

GTS217E Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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ISSUED DATE :2004/10/13
REVISED DATE :2006/12/25B
GTS217E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
22m
7A
Description
The GTS217E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Optimal DC/DC battery application
Package Dimensions
REF.
A
A1
b
c
D
Millimeter
Min. Max.
- 1.20
0.05
0.15
0.19
0.30
0.09
0.20
2.90
3.10
REF.
E
E1
e
L
S
Millimeter
Min. Max.
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0° 8°
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Ratings
20
±12
7
5.7
30
1.5
0.012
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
Value
83
Unit
/W
GTS217E
Page: 1/4




GTM

GTS217E Datasheet Preview

GTS217E Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

ISSUED DATE :2004/10/13
REVISED DATE :2006/12/25B
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
20
-
-
V VGS=0, ID=250uA
VGS(th)
0.5
-
1.0
V VDS=VGS, ID=250uA
gfs
- 24 -
S VDS=5V, ID=7A
IGSS - - ±10 uA VGS= ±10V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
IDSS
-
-
-
-
1 uA VDS=16V, VGS=0
5 uA VDS=16V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 22 m VGS=4.5V, ID=6.6A
- 30
VGS=2.5V, ID=5.5A
9.3 -
ID=7A
0.6 - nC VDS=10V
3.6 -
VGS=4.5V
820 -
934 -
860 -
510 -
VDS=10V
ID=1A
ns VGS=4.5V
RG=6
RL=10
231
164 -
137 -
VGS=0V
pF VDS=10V
f=1.0MHz
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
VSD - - 1.0 V IS=1.0A, VGS=0V
Trr
- 15.2 -
ns IS=7A, VGS=0V
Qrr - 6.3 - nC dI/dt=100A/ s
Continuous Source Current (Body Diode)
IS
- - 2.5 A VD=VG=0V, VS=1.0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
GTS217E
Page: 2/4


Part Number GTS217E
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
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