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GTS9928E Datasheet Preview

GTS9928E Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Pb Free Plating Product
ISSUED DATE :2004/10/13
REVISED DATE :2005/08/10B
GTS9928E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
22m
5A
Description
The GTS9928E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Optimal DC/DC battery application
Package Dimensions
REF.
A
A1
b
c
D
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Drain Current3, VGS@4.5V
Drain Current3, VGS@4.5V
Pulsed Drain Current1
Power Dissipation
Linear Derating Factor
VGS
ID @Ta=25
ID @Ta=70
IDM
PD @Ta=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
Millimeter
Min. Max.
- 1.20
0.05
0.15
0.19
0.30
0.09
0.20
2.90
3.10
REF.
E
E1
e
L
S
Ratings
20
12
5.0
3.5
25
1
0.008
-55 ~ +150
Ratings
125
Millimeter
Min. Max.
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0° 8°
Unit
V
V
A
A
A
W
W/
Unit
/W
1/6




GTM

GTS9928E Datasheet Preview

GTS9928E Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

ISSUED DATE :2004/10/13
REVISED DATE :2005/08/10B
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
20
-
0.5
-
-
-
0.02
-
21
-
- V VGS=0, ID=250uA
- V/ Reference to 25 , ID=1mA
- V VDS=VGS, ID=250uA
- S VDS=10V, ID=5A
10 uA VGS= 12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=20V, VGS=0
- 25 uA VDS=20V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 22 m VGS=4.5V, ID=5A
- 28
VGS=2.5V, ID=2A,
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 15.9 -
ID=5A
Qgs - 1.5 - nC VDS=10V
Qgd - 7.4 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 6.2 -
-9-
- 30 -
- 11 -
VDS=10V
ID=1A
ns VGS=4.5V
RG=3.3
RD=10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 530 -
- 245 -
- 125 -
VGS=0V
pF VDS=20V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Forward On Voltage2
VSD
Continuous Source Current(Body Diode)
IS
Min.
-
-
Typ.
-
-
Max.
1.2
0.83
Unit Test Conditions
V IS=5A, VGS=0, Tj=25
A VD=VG=0V, VS=1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 208
/W when mounted on Min. copper pad.
2/6


Part Number GTS9928E
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
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