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GWS

GWS2111 Datasheet Preview

GWS2111 Datasheet

Dual 12V N-Channel Power MOSFET

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GWS2111
Dual 12V N-Channel Power
MOSFET
GWS2111
V(BR)DSS
rDS(on)
Product Summary
ID=250uA
VGS=4.5V
12.0 V
34 mΩ
Min
Typ
Features
• Low RDS (on) in a small footprint
• Ultra low gate charge and figure of merit
• Chip-scale 0.77 mm x 0.77 mm LGA package
• Low Thermal Resistance
Equivalent Circuit
FET1
FET2
Gate1
Gate2
Applications
• Li ion Battery Protection
• Portable Devices, Cell Phones, PDA
• Rated for short circuit and over current protection
• Integrated gate diodes provide ESD protection of 2500V HBM.
Source1
Source2
Description
The GWSXXXX is a Dual 12V, 34 mΩ, N-Channel Power Mosfet used
for Li ion battery protection. It is offered in a chip-scale 0.77 mm X 0.77
mm LGA with a very low thickness profile of 0.20 mm. The device uses
Great Wall Semiconductor’s patented Lateral PowerTM CMOS
technology. It has extremely high power density, reducing the board
size of Li Ion Battery power system. Designed for hand held devices
with a high level of ESD protection.
G2 S2
G1 S1
0.77 mm
Bottom View
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwis e
noted)
Parameter
Symbol Steady State
Drain-Source Voltage
VDS 12
Gate-Source Voltage
a
Drain Current
VGS ± 8
ID 1.0
Pulsed Drain Current
a
Maximum Power Dissipation
o
TA=25 C
o
TA=70 C
IDM
PD
10
1.0
0.64
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Unit
V
A
W
o
C
Thermal Resistance Ratings
Parameter
Junction-to-Am bient
Junction-to-Foot (Lead)
a
Surface Mounted on FR4 Board.
Steady Sate
Steady Sate
Symbol
RthJA
RthJF
Typ
125
16
Unit
o
C/W
SP-2111-100 -02 3/24/2014
1




GWS

GWS2111 Datasheet Preview

GWS2111 Datasheet

Dual 12V N-Channel Power MOSFET

No Preview Available !

GWS2111
Parameter
Static
Symbol
Test Condition
Min Typ Max Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Threshold Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance1
(per MOSFET)
rDS(on)
Source-Source On-State Resistance1
(both MOSFETs in series)
rSS(on)
VGS = 0V, ID = 250uA
VGS = 0V, VDS = 12V
VDS = 0V VGS = ±8V
VDS = VGS, ID = 1mA
VGS = 4.5V, ID = 0.5A
VGS = 4.0V, ID = 0.5A
VGS = 3.1V, ID = 0.5A
VGS = 2.5V, ID = 0.5A
VGS = 4.5V, ISS = 0.5A
VGS = 4.0V, ISS = 0.5A
VGS = 3.1V, ISS = 0.5A
VGS = 2.5V, ISS = 0.5A
12 V
1 uA
±10 uA
0.5 0.8 1.5
25 34 44
V
27 36 49
30 42 74
43 50 114
mΩ
50 68 88
53 72 97
59 84 148
86 100 228
Source-Drain Diode Voltage
Dynamic
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VSD
VGS = 0, IS = 1A
0.5 0.8 1
V
Qg
Ciss
Coss
Crss
VDS = 9.6V, ID = 0.5A, VGS = 4.0V
VDS = 10V, VGS = 0V, f = 1 MHz
1.3
150
110
50
nC
pF
No te: 1. Go o d Kelvin M easurement Required.
Output Characteristics
10
VGS=4.5V to 4.0V
3.1V
8
2.5V
6
4
2
0
0.0
0.5 1.0 1.5
VSS - Source-to-Source Voltage (V)
2.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Transfer Characteristics
TJ = 125˚C
75˚C
25˚C
-25˚C
123
VGS - Gate-to-Source (V)
4
SP-2111-100 -02 3/24/2014
2


Part Number GWS2111
Description Dual 12V N-Channel Power MOSFET
Maker GWS
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