2SC3356W Features
* z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz Production specification 2SC3356W Pb Lead-free z High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC3356W Markin
2SC3356W_GalaxySemi-ConductorHoldingsLimited.pdf
Datasheet Details
2SC3356W, 2SC3356W_GalaxySemi
Galaxy Semi-Conductor Holdings Limited
196.65 KB
Silicon npn transistor.
This datasheet PDF includes multiple part numbers: 2SC3356W, 2SC3356W_GalaxySemi.
Please refer to the document for exact specifications by model.
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2SC3356W Distributor
