Datasheet Details
| Part number | 5N20V |
|---|---|
| Manufacturer | Gemos |
| File Size | 301.50 KB |
| Description | GE5N20V |
| Datasheet | 5N20V_Gemos.pdf |
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Overview: GEMOS www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR GE5N20V N-CHANNEL MOS FIELD EFFECT.
| Part number | 5N20V |
|---|---|
| Manufacturer | Gemos |
| File Size | 301.50 KB |
| Description | GE5N20V |
| Datasheet | 5N20V_Gemos.pdf |
|
|
|
The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
This device is suitable for use as a Battery protection or in other Switching application.
Schematic diagram GENERAL
Compare 5N20V distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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