GA35XCP12-247 Description
IGBT/SiC Diode.
GA35XCP12-247 Key Features
- Optimal Punch Through (OPT) technology -SiC freewheeling diode
- Positive temperature coefficient for easy paralleling -Extremely fast switching speeds
- Temperature independent switching behavior of SiC rectifier
- Best RBSOA/SCSOA capability in the industry
- High junction temperature
- Industry standard packaging
- RoHS pliant
- Industry's highest switching speeds -High temperature operation
- Improved circuit efficiency -Low switching losses