Part GA50SICP12-227
Description Silicon Carbide Junction Transistor/Schottky Diode Co-pack
Category Diode
Manufacturer GeneSiC
Size 240.80 KB
Pricing from 142.6425 USD, available from Newark and Microchip USA.
GeneSiC

GA50SICP12-227 Overview

Key Specifications

Package: SOT-227
Pins: 4
Max Operating Temp: 175 °C

Key Features

  • 175 °C maximum operating temperature
  • Temperature independent switching performance
  • Gate oxide free SiC switch
  • Integrated SiC Schottky Rectifier
  • Positive temperature coefficient for easy paralleling
  • Low intrinsic device capacitance
  • Low gate charge Package
  • RoHS Compliant S D S G GA50SICP12-227 VDS VDS(ON) ID RDS(ON) = = = = 1200 V 1.4 V 50 A 28 mΩ Advantages
  • Low switching losses
  • High circuit efficiency

Price & Availability

Seller Inventory Price Breaks Buy
Newark 0 - View Offer
Microchip USA 109 100+ : 142.6425 USD
1000+ : 140.14 USD
10000+ : 138.88875 USD
View Offer