Datasheet4U.com

GA50SICP12-227 - Silicon Carbide Junction Transistor/Schottky Diode Co-pack

Product Overview

GeneSiC

📥 Download Datasheet

GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack by GeneSiC - Datasheet Preview — Datasheet preview – GA50SICP12-227

Datasheet Details

Part number	GA50SICP12-227
Manufacturer	GeneSiC
File Size	240.80 KB
Description	Silicon Carbide Junction Transistor/Schottky Diode Co-pack
Datasheet	GA50SICP12-227 Datasheet
Additional preview pages of the GA50SICP12-227 datasheet.

Product details

Features

175 °C maximum operating temperature.
Temperature independent switching performance.
Gate oxide free SiC switch.
Integrated SiC Schottky Rectifier.
Positive temperature coefficient for easy paralleling.
Low intrinsic device capacitance.
Low gate charge Package.
RoHS Compliant S D S G GA50SICP12-227 VDS VDS(ON) ID RDS(ON) = = = = 1200 V 1.4 V 50 A 28 mΩ Advantages.
Low switching losses.
High circuit efficiency.
High temperature operati.

📁 Similar Datasheet

GA500TD60U - HALF-BRIDGE IGBT DUAL INT-A-PAK (International Rectifier)
GA50K6A1A - THERMISTORS (TE)
GA50K6A1B - THERMISTORS (TE)
GA50K6A1C - THERMISTORS (TE)
GA50K6A1D - THERMISTORS (TE)
GA50TS120K - Short Circuit Rated Ultra-FastTM Speed IGBT (XIAN)
GA50TS120U - HALF-BRIDGE IGBT INT-A-PAK (International Rectifier)
GA5210PH - GA5210PH High-Pressure Process (ETC)

Other Datasheets by GeneSiC

GA50JT06-258 - Junction Transistor
GA50JT06-CAL - OFF Silicon Carbide Junction Transistor
GA50JT12-247 - Normally - OFF Silicon Carbide Junction Transistor
GA50JT12-CAL - Junction Transistor
GA50JT17-247 - Junction Transistor
GA50JT17-CAL - Junction Transistor

Published: May 6, 2019 |