GA100SICP12-227 Description
GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack.
GA100SICP12-227 Key Features
- 175 °C Maximum Operating Temperature
- Gate Oxide Free SiC Switch
- Optional Gate Return Pin
- Exceptional Safe Operating Area
- Integrated SiC Schottky Rectifier
- Excellent Gain Linearity
- Temperature Independent Switching Performance
- Low Output Capacitance
- Positive Temperature Coefficient of RDS,ON
- Suitable for Connecting an Anti-parallel Diode