GA100SICP12-227
GA100SICP12-227 is Silicon Carbide Junction Transistor/Schottky Diode Co-pack manufactured by GeneSiC.
Silicon Carbide Junction Transistor/Schottky Diode Co-pack
Features
- 175 °C Maximum Operating Temperature
- Gate Oxide Free SiC Switch
- Optional Gate Return Pin
- Exceptional Safe Operating Area
- Integrated SiC Schottky Rectifier
- Excellent Gain Linearity
- Temperature Independent Switching Performance
- Low Output Capacitance
- Positive Temperature Coefficient of RDS,ON
- Suitable for Connecting an Anti-parallel Diode
Advantages
- patible with Si MOSFET/IGBT Gate Drive ICs
- > 20 µs Short-Circuit Withstand Capability
- Lowest-in-class Conduction Losses
- High Circuit Efficiency
- Minimal Input Signal Distortion
- High Amplifier Bandwidth
- Reduced cooling...
