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GA100SICP12-227
Silicon Carbide Junction Transistor/Schottky Diode Co-pack
Features
• 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Optional Gate Return Pin • Exceptional Safe Operating Area • Integrated SiC Schottky Rectifier • Excellent Gain Linearity • Temperature Independent Switching Performance • Low Output Capacitance • Positive Temperature Coefficient of RDS,ON • Suitable for Connecting an Anti-parallel Diode
Advantages
• Compatible with Si MOSFET/IGBT Gate Drive ICs • > 20 µs Short-Circuit Withstand Capability • Lowest-in-class Conduction Losses • High Circuit Efficiency • Minimal Input Signal Distortion • High Amplifier Bandwidth • Reduced cooling requirements • Reduced system size
VDS = 1200 V
RDS(ON)
= 10 mΩ
ID (@ 25°C)
= 160 A
ID (@ 115°C)
= 100 A
GA100SICP12-227 Datasheet
