GA35XCP12-247 - IGBT/SiC Diode Co-pack

GeneSiC

Key Features

Optimal Punch Through (OPT) technology.
SiC freewheeling diode.
Positive temperature coefficient for easy paralleling.
Extremely fast switching speeds.
Temperature independent switching behavior of SiC rectifier.
Best RBSOA/SCSOA capability in the industry.
High junction temperature.
Industry standard packaging Package.
RoHS Compliant GA35XCP12-247 VCES = 1200 V I CM = 35 A VCE(SAT) = 3.0 V 2 1 Advantages.

GA35XCP12-247 igbt/sic diode co-pack by GeneSiC - Datasheet Preview

Datasheet Details

Part number	GA35XCP12-247
Manufacturer	GeneSiC
File Size	446.89 KB
Description	IGBT/SiC Diode Co-pack
Datasheet	GA35XCP12-247 Datasheet

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IGBT/SiC Diode Co-pack Features •Optimal Punch Through (OPT) technology •SiC freewheeling diode • Positive temperature coefficient for easy paralleling •Extremely fast switching speeds • Temperature independent switching behavior of SiC rectifier • Best RBSOA/SCSOA capability in the industry • High junction temperature • Industry standard packaging Package •RoHS Compliant GA35XCP12-247 VCES = 1200 V I CM = 35 A VCE(SAT) = 3.