GC2X100MPS06-227 Description
GC2X100MPS06-227 650V 200A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode.
GC2X100MPS06-227 Key Features
- High Avalanche (UIS) Capability
- Enhanced Surge Current Capability
- Superior Figure of Merit QC/IF
- 3000 V Isolation for Low Thermal Resistance
- 175 °C Maximum Operating Temperature
- Temperature Independent Switching Behavior
- Positive Temperature Coefficient of VF
- Extremely Fast Switching Speed
- = 320 nC
- Low Standby Power Losses
GC2X100MPS06-227 Applications
- Boost Diode in Power Factor Correction (PFC)