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GeneSiC

GC2X100MPS06-227 Datasheet Preview

GC2X100MPS06-227 Datasheet

Silicon Carbide Schottky Diode

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GC2X100MPS06-227
650V 200A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
High Avalanche (UIS) Capability
Enhanced Surge Current Capability
Superior Figure of Merit QC/IF
3000 V Isolation for Low Thermal Resistance
175 °C Maximum Operating Temperature
Temperature Independent Switching Behavior
Positive Temperature Coefficient of VF
Extremely Fast Switching Speed
Package
3
VRRM
IF (Tc = 100°C)
QC
4
= 650 V
= 272 A *
= 320 nC *
2
1
SOT-227 (Isolated Base)
Advantages
Low Standby Power Losses
Improved Circuit Efficiency (Lower Overall Cost)
Low Switching Losses
Ease of Paralleling without Thermal Runaway
Smaller Heat Sink Requirements
Low Reverse Recovery Current
Low Device Capacitance
Low Reverse Leakage Current
Applications
Boost Diode in Power Factor Correction (PFC)
Switched Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Motor Drives
Freewheeling / Anti-parallel Diode in Inverters
Solar Inverters
Electric Vehicles (EV) & DC Fast Charging
Induction Heating & Welding
Absolute Maximum Ratings (At TC = 25 °C Unless Otherwise Stated)
Parameter
Repetitive Peak Reverse Voltage
(Per Leg)
Continuous Forward Current
(Per Leg / Per Device)
Symbol
VRRM
IF
Non-Repetitive Peak Forward Surge
Current, Half Sine Wave (Per Leg)
Repetitive Peak Forward Surge Current,
Half Sine Wave (Per Leg)
Non-Repetitive Peak Forward Surge
Current (Per Leg)
i2t Value (Per Leg)
Non-Repetitive Avalanche Energy
(Per Leg)
Diode Ruggedness (Per Leg)
Power Dissipation (Per Leg / Per Device)
Operating and Storage Temperature
IF,SM
IF,RM
IF,max
∫i2 dt
EAS
dV/dt
Ptot
Tj , Tstg
Conditions
TC = 25 °C, D = 1
TC = 100 °C, D = 1
TC = 129 °C, D = 1
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
L = 0.3 mH, IAS = 100 A
VR = 0 ~ 520 V
TC = 25 °C
* Per Device
Values
650
209 / 418
136 / 272
100 / 200
800
640
480
336
4000
3200
1450
200
517 / 1034
-55 to 175
Unit
V
A
A
A
A
A2s
mJ
V/ns
W
°C
April 2019 Rev1.2
www.genesicsemi.com/schottky_mps/GC2X100MPS06-227.pdf
Page 1 of 7




GeneSiC

GC2X100MPS06-227 Datasheet Preview

GC2X100MPS06-227 Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

GC2X100MPS06-227
650V 200A SiC Schottky MPS™ Diode
Electrical Characteristics (Per Leg)
Parameter
Symbol
Diode Forward Voltage
VF
Reverse Current
IR
Total Capacitive Charge
QC
Switching Time
ts
Total Capacitance
C
Conditions
IF = 50 A, Tj = 25 °C
IF = 50 A, Tj = 175 °C
VR = 650 V, Tj = 25 °C
VR = 650 V, Tj = 175 °C
IF ≤ IF,MAX
dIF/dt = 200 A/μs
Tj = 175 °C
VR = 200 V
VR = 400 V
VR = 200 V
VR = 400 V
VR = 1 V, f = 1 MHz
VR = 400 V, f = 1 MHz
Min.
Values
Typ. Max.
1.5 1.8
1.8 2.2
4 20
40 200
114
160
< 10
5170
460
Unit
V
µA
nC
ns
pF
Thermal / Package Characteristics
Parameter
Thermal Resistance, Junction – Case
(Per Leg)
Weight
Mounting Torque
Symbol
RthJC
WT
TM
Isolation Voltage (RMS)
Creepage Distance on Surface
Striking Distance Through Air
VISO
dCtt
dCtb
dStt
dStb
Conditions
Screws to Heatsink
Terminal Connection (M4)
t = 1 s (50 / 60 Hz)
t = 60 s (50 / 60 Hz)
Terminal to Terminal
Terminal to Backside
Terminal to Terminal
Terminal to Backside
Values
Min. Typ. Max.
0.29
28
3000
2500
10.5
8.5
3.2
6.8
1.5
1.3
Unit
°C/W
g
Nm
V
mm
mm
April 2019 Rev1.2
www.genesicsemi.com/schottky_mps/GC2X100MPS06-227.pdf
Page 2 of 7


Part Number GC2X100MPS06-227
Description Silicon Carbide Schottky Diode
Maker GeneSiC
Total Page 7 Pages
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