GC2X100MPS06-227
GC2X100MPS06-227 is Silicon Carbide Schottky Diode manufactured by GeneSiC.
650V 200A Si C Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
- High Avalanche (UIS) Capability
- Enhanced Surge Current Capability
- Superior Figure of Merit QC/IF
- 3000 V Isolation for Low Thermal Resistance
- 175 °C Maximum Operating Temperature
- Temperature Independent Switching Behavior
- Positive Temperature Coefficient of VF
- Extremely Fast Switching Speed
Package
VRRM IF (Tc = 100°C) QC
= 650 V = 272 A
- = 320 n C
- 2 1
SOT-227 (Isolated Base)
Advantages
- Low Standby Power Losses
- Improved Circuit Efficiency (Lower Overall Cost)
- Low Switching Losses
- Ease of Paralleling without Thermal Runaway
- Smaller Heat Sink Requirements
- Low Reverse Recovery Current
- Low Device Capacitance
- Low Reverse Leakage Current
Applications
- Boost Diode in Power Factor Correction (PFC)
- Switched Mode Power Supply (SMPS)
- Uninterruptible Power Supply...
