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GC2X100MPS06-227
650V 200A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • 3000 V Isolation for Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speed
Package
3
VRRM IF (Tc = 100°C) QC
4
= 650 V = 272 A * = 320 nC *
2 1
SOT-227 (Isolated Base)
Advantages
• Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Reverse Leakage Current
Applications
• Boost Diod
GC2X100MPS06-227 Datasheet
