900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






General Semiconductor

BAS4 Datasheet Preview

BAS4 Datasheet

Schottky Diodes

No Preview Available !

BAS40 THRU BAS40-06
Schottky Diodes
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
12
.037(0.95) .037(0.95)
FEATURES
These diodes feature very low turn-on
voltage and fast switching.
These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
33
Top View
12
BAS40
Marking: 43
12
BAS40-04
Marking: 44
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
3
12
BAS40-05
Marking: 45
3
Top View
12
BAS40-06
Marking: 46
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE
Ratings at 25 °C ambient temperature unless otherwise specified
Repetitive Peak Reverse Voltage
Forward Continuous Current at Tamb = 25 °C
Surge Forward Current at tp < 1 s, Tamb = 25 °C
Power Dissipation1) at Tamb = 25 °C
Junction Temperature
Storage Temperature Range
1) Device on fiberglass substrate, see layout
Symbol
VRRM
IF
IFSM
Ptot
Tj
TS
Value
40
2001)
6001)
2001)
150
–55 to +150
Unit
V
mA
mA
mW
°C
°C
4/98




General Semiconductor

BAS4 Datasheet Preview

BAS4 Datasheet

Schottky Diodes

No Preview Available !

BAS40 THRU BAS40-06
ELECTRICAL CHARACTERISTICS
Ratings for one diode at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Reverse Breakdown Voltage
Tested with 10 µA Pulses
V(BR)R
40
Leakage Current
Pulse Test tp < 300 µs
at VR = 30 V
Forward Voltage
Pulse Test tp < 300 µs
at IF = 1 mA
at IF = 40 mA
IR – 20 100
VF – – 380
VF – – 1000
Capacitance
at VR = 0 V, f = 1 MHz
Ctot
4.0 5
Reverse Recovery Time
from IF = 10 mA through IR = 10 mA to IR = 1 mA
trr
––5
Thermal Resistance Junction to Ambient Air
RthJA
4301)
1) Device on fiberglass substrate, see layout
.30 (7.5)
.12 (3)
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
.04 (1) .08 (2)
.04 (1)
.08 (2)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for RthJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
Unit
V
nA
mV
mV
pF
ns
K/W


Part Number BAS4
Description Schottky Diodes
Maker General Semiconductor
Total Page 2 Pages
PDF Download

BAS4 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BAS100ATB6 SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
Pan Jit International
2 BAS101 High Voltage Switching Diodes
NXP
3 BAS101S High Voltage Switching Diodes
NXP
4 BAS11 Controlled avalanche rectifiers
NXP
5 BAS116 Low-leakage diode
NXP
6 BAS116 Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode)
Siemens Semiconductor Group
7 BAS116 SURFACE MOUNT LOW LEAKAGE DIODE
Diodes Incorporated
8 BAS116 SURFACE MOUNT SWITCHING DIODES
DC COMPONENTS
9 BAS116 SURFACE MOUNT SWITCHING DIODES
TIPTEK





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy