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General Semiconductor

ES2B Datasheet Preview

ES2B Datasheet

SURFACE MOUNT FAST EFFICIENT PLASTIC RECTIFIER

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ES2A THRU ES2D
SURFACE MOUNT FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts Forward Current - 2.0 Amperes
DO-214AA
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.096 (2.44)
0.084 (2.13)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
MAX.
0.220 (5.59)
0.205 (5.21)
Dimensions in inches and (millimeters)
FEATURES
¨ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
¨ For surface mount applications
¨ Low profile package
¨ Built-in strain relief
¨ Ideal for automated placement
¨ Easy pick and place
¨ Glass passivated chip junction
¨ Superfast recovery times for high efficiency
¨ Low power loss, high efficiency
¨ High temperature soldering: 250¡C/10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AA molded plastic body over passivated chip
Terminals: Solder plated solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified.
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=110¡C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) at TL=110¡C
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25¡C
TA=100¡C
Maximum reverse recovery time (NOTE 1)
Maximum reverse recovery time
(NOTE 2)
TJ=25¡C
TJ=100¡C
Maximum stored charge
(NOTE 2)
TJ=25¡C
TJ=100¡C
Typical junction capacitance (NOTE 3)
Maximum thermal resistance (NOTE 4)
Operating junction and storage temperature range
SYMBOLS
VRRM
VRMS
VDC
I(AV)
ES2A
EA
50
35
50
IFSM
VF
IR
trr
trr
Qrr
CJ
RQJA
RQJL
TJ, TSTG
ES2B
EB
100
70
100
ES2C
EC
150
105
150
2.0
50.0
0.90
10.0
350
20.0
30.0
50.0
10.0
25.0
18.0
75.0
20.0
-55 to +150
ES2D
ED
200
140
200
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
mA
ns
ns
nC
pF
¡C/W
¡C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR= I.0A, lrr=0.25A
(2) Trr and Qrr measured at: IF=2.0A, VR=30V, di/dt=50A/ms, Irr=10% IR
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Units mounted on P.C.B. 5.0 x 5.0mm (0.013mm thick) land areas
2/10/99




General Semiconductor

ES2B Datasheet Preview

ES2B Datasheet

SURFACE MOUNT FAST EFFICIENT PLASTIC RECTIFIER

No Preview Available !

RATING AND CHARACTERISTIC CURVES ES2A THRU ES2D
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
RESISTIVE OR INDUCTIVE LOAD
P.C.B. MOUNTED ON 0.2 x 0.2Ó (5.0
x 5.0mm) COPPER PAD AREAS
0
80 90 100 110 120 130 140 150
LEAD TEMPERATURE, ¡C
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
10 TJ=25¡C
PULSE WIDTH=300ms
1% DUTY CYCLE
1
0.1
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method) at TL=110¡C
25
20
15
10
5.0
0
1
10
NUMBER OF CYCLES AT 60 HZ
100
1,000
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
100
10
TJ=125¡C
TJ=85¡C
1
TJ=25¡C
0.1
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
1.8
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
14
TJ=25¡C
f=1.0 MHZ
12 Vsig=50mVp-p
10
8.0
6.0
4.0
2.0
0
0.1
1
10 100
REVERSE VOLTAGE, VOLTS
0.01
0
20 40
60 80 100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
100
10
1
0.1 1
10 100


Part Number ES2B
Description SURFACE MOUNT FAST EFFICIENT PLASTIC RECTIFIER
Maker General Semiconductor
Total Page 2 Pages
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