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ES25P80 Datasheet 8Mbit CMOS 3.0 Volt Flash Memory

Manufacturer: Excel Semiconductor

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Datasheet Details

Part number ES25P80
Manufacturer Excel Semiconductor
File Size 495.47 KB
Description 8Mbit CMOS 3.0 Volt Flash Memory
Datasheet download datasheet ES25P80 Datasheet

General Description

The ES25P80 device is a 3.0 volt (2.7V to 3.6V) single power flash memory device.

ES25P80 consists of Sixteen sectors, each with 512 Kb memory.

Data appears on SI input pin when inputting data into the memory and on the SO output pin when outputting data from the memory.

Overview

E ES S II ADVANCED INFORMATION Excel Semiconductor inc.

ES25P80 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface www.DataSheet4U.com ARCHITECTURAL ADVANTAGES • Single power supply operation - 2.7V -3.6V for read and program operations • Memory Architecture - Sixteen sectors with 512 Kb each • Program - Page program ( up to 256 bytes) in 1.5ms (typical) - Program cycles are on a page by page basis • Erase - 0.5s typical sector erase time - 6s typical bulk erase time • Endurance - 100,000 cycles per sector (typical) • Data Retention - 20 years (typical) • Parameter Page - 256 Byte page independent from main memory for parameter storage - Seperate from array, erase time < 20ms • Device ID - JEDEC standard two-byte electronic signature - RES instruction one-byte electronic signature for backward compatibility - Manufacturer and device type ID • Process Technology - Manufactured on 0.

Key Features

  • Memory Protection - W# pin works in conjunction with Status Register Bits to protect specified memory areas - Status Register Block Protection Bits (BP2, BP1, BP0) in status register configure parts of memory as read only.

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