GSM2320P Datasheet | Globaltech

20V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V - Improved dv/dt capability - Fast switching - Suit for 1.2V Gate Drive Applications - Green Device Available - SOT-323 package design Applications - Notebook - Load Switch - Battery Protection - Hend-Held Instruments Packages & Pin Assignments GSM2320PX5F (SOT-323) Top Views Pin Description 1 Gate 2 Source 3 Drain Ordering Information .gs-power. 1 Marking Information Part Number GSM2320PX5F Package SOT-323 Part Marking k YM Quantity 3000pcs...