GSMDB2116S Datasheet, Globaltech

* N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V
* P-Channel -20V, -4.7A, RDS(ON)=95mΩ@VGS=-4.5V
* Fast switching
* Suit for -1.8V/1.8V Gate Drive Applications .

Features
* N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V
* P-Channel -20V, -4.7A, RDS(ON)=95mΩ@VGS=-4.5V
* Fast.

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high.