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GSMDC3960X Datasheet - Globaltech

N-Channel MOSFET

GSMDC3960X Features

* 30V, 115A, RDS(ON)=2.4mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* DFN5X6-8L package design Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Packages

GSMDC3960X General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDC3960X Datasheet (507.20 KB)

Preview of GSMDC3960X PDF

Datasheet Details

Part number:

GSMDC3960X

Manufacturer:

Globaltech

File Size:

507.20 KB

Description:

N-channel mosfet.

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TAGS

GSMDC3960X N-Channel MOSFET Globaltech

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