GSMDD4906 mosfet equivalent, n-channel mosfet.
* 40V, 50A, RDS(ON)=9.5mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* TO-252-2L package design
Applications
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Features
* 40V, 50A, RDS(ON)=9.5mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* Green Device.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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