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GPT02N60 - POWER FIELD EFFECT TRANSISTOR

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Datasheet Details

Part number	GPT02N60
Manufacturer	Greatpower
File Size	364.31 KB
Description	POWER FIELD EFFECT TRANSISTOR
Datasheet	GPT02N60-Greatpower.pdf

GPT02N60 Product details

Features

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching.

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Published: Nov 8, 2017 |