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GPT06N60 - POWER FIELD EFFECT TRANSISTOR

General Description

GPT06N60 POWER FIELD EFFECT TRANSISTOR

Key Features

  • This advanced high voltage MOSFET is designed to withstand Higher Current Rating high energy in the avalanche mode and switch efficiently. This Lower Rds(on) new high energy device also offers a drain-to-source diode Lower Capacitances with fast recovery time. Designed for high voltage, high speed Lower Total Gate Charge switching.

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Datasheet Details

Part number GPT06N60
Manufacturer Greatpower
File Size 1.37 MB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT06N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GENERAL DESCRIPTION GPT06N60 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to withstand Higher Current Rating high energy in the avalanche mode and switch efficiently. This Lower Rds(on) new high energy device also offers a drain-to-source diode Lower Capacitances with fast recovery time. Designed for high voltage, high speed Lower Total Gate Charge switching applications such as power supplies, converters, Tighter VSD Specifications power motor controls and bridge circuits.