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GPT06N70D - POWER FIELD EFFECT TRANSISTOR

This page provides the datasheet information for the GPT06N70D, a member of the GPT06N70 POWER FIELD EFFECT TRANSISTOR family.

Features

  • This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching.

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Datasheet Details

Part number GPT06N70D
Manufacturer Greatpower
File Size 290.63 KB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT06N70D Datasheet
Additional preview pages of the GPT06N70D datasheet.

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Full PDF Text Transcription

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GPT06N70 / GPT06N70D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
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