2SJ598 - MOSFET

Guangdong Kexin Industrial

Datasheet Details

Part number	2SJ598
Manufacturer	Guangdong Kexin Industrial
File Size	79.79 KB
Description	MOSFET
Datasheet	2SJ598_GuangdongKexinIndustrial.pdf

Low on-resistance RDS(on)1 = 130 m RDS(on)2 = 190 m MAX. (VGS =-10 V, ID = -6 A) MAX. (VGS = -4.0 V, ID =-6 A) +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain curren.

📁 2SJ598 Similar Datasheet

Other Datasheets by Guangdong Kexin Industrial

Published: May 26, 2009 |