2SJ598-ZK Datasheet - Renesas

2SJ598-ZK P-Channel Power MOSFET

2SJ598-ZK Features

* Low on-state resistance RDS(on)1 = 130 mΩ MAX. (VGS =

* 10 V, ID =

* 6 A) RDS(on)2 = 190 mΩ MAX. (VGS =

* 4.0 V, ID =

* 6 A)

* Low Ciss: Ciss = 720 pF TYP.

* Built-in gate protection diode

* Applications : For switching Outline Datasheet

Datasheet Details

2SJ598-ZK

1.07 MB

P-channel power mosfet.

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2SJ598-ZK 2SJ598-ZK P-Channel Power MOSFET Renesas

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