2SJ598-ZK P-Channel Power MOSFET

Renesas

Description

2SJ598-ZK P-Channel Power MOS FET -60V, -12A, 130mΩ .

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Datasheet Specifications

Part number: 2SJ598-ZK
Manufacturer: Renesas ↗
File Size: 1.07 MB
Datasheet: 2SJ598-ZK-Renesas.pdf
Description: P-Channel Power MOSFET

Features

* Low on-state resistance RDS(on)1 = 130 mΩ MAX. (VGS =
* 10 V, ID =
* 6 A) RDS(on)2 = 190 mΩ MAX. (VGS =
* 4.0 V, ID =
* 6 A)
* Low Ciss: Ciss = 720 pF TYP.
* Built-in gate protection diode

Applications

* : For switching Outline Datasheet R07DS1587EJ0200 Rev.2.00 Feb.3.2025 Absolute Maximum Ratings Item Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Power Dissipation Tc = 25℃ Power Dissipation Ta = 25℃ Junction Temperature Storage Temperature Single Avalanc

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2SJ598-ZK P-Channel Power MOSFET Renesas

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