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2SJ598 Datasheet - INCHANGE

P-Channel MOSFET

2SJ598 Features

* Static drain-source on-resistance: RDS(on)≤130mΩ

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* Built in gate protection diode

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET

2SJ598 Datasheet (251.04 KB)

Preview of 2SJ598 PDF

Datasheet Details

Part number:

2SJ598

Manufacturer:

INCHANGE

File Size:

251.04 KB

Description:

P-channel mosfet.

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TAGS

2SJ598 P-Channel MOSFET INCHANGE

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