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2SJ598 P-Channel MOSFET

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Description

isc P-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
2SJ598
Manufacturer
INCHANGE
File Size
251.04 KB
Datasheet
2SJ598-INCHANGE.pdf
Description
P-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤130mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Built in gate protection diode
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

2SJ598 Distributors

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P-Channel MOSFET INCHANGE
INCHANGE 2SJ598-like datasheet