2SJ389S P-Channel MOSFET

INCHANGE

Description

isc P-Channel MOSFET Transistor 2SJ389S *.

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Datasheet Specifications

Part number: 2SJ389S
Manufacturer: INCHANGE
File Size: 244.39 KB
Datasheet: 2SJ389S-INCHANGE.pdf
Description: P-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤135mΩ(@VGS= -10V; ID= -5A)
* High speed switching
* Low drive current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* High speed power switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -10 PD Total Dissipation @TC=25℃ 30 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperat

2SJ389S Distributors

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2SJ389S P-Channel MOSFET INCHANGE

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