2SJ380 - P-Channel MOSFET Transistor
(Inchange Semiconductor)
isc P-Channel MOSFET Transistor
DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode .
2SJ381 - P-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:EN5296A
Features
· Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive.
P-Channel Silicon MOSFET
2SJ381
Ultrahigh-Speed Swit.
2SJ382 - P-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:EN5057
Features
· Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive.
P-Channel Silicon MOSFET
2SJ382
Ultrahigh-Speed Switc.
2SJ383 - P-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:EN5297A
Features
· Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive.
P-Channel Silicon MOSFET
2SJ383
Ultrahigh-Speed Swit.
2SJ386 - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ386
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current .
2SJ387 - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ387(L), 2SJ387(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance Low drive current 2.5 V Gat.
2SJ387L - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ387(L), 2SJ387(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance Low drive current 2.5 V Gat.
2SJ387S - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ387(L), 2SJ387(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance Low drive current 2.5 V Gat.