2SJ313 Datasheet - Toshiba Semiconductor

2SJ313 P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application z High breakdown voltage: VDSS = 180 V z High forward transfer admittance: |Yfs| = 0.7 S (typ.) z Complementary to 2SK2013 2SJ313 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage Gate source voltage Drain current (Note 1) Power dissipation (Tc = 25°C) Channel temperature Storage temperature range .

2SJ313_ToshibaSemiconductor.pdf